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美國(guó)EOS硅si光電探測(cè)器
美國(guó)EOS硅si光電探測(cè)器
1、Si探測(cè)器（響應(yīng)波段范圍：0.2-1.1）:
簡(jiǎn)介：美國(guó)EOS硅si光電探測(cè)器，硅的探測(cè)器的工作波長(zhǎng)在0.3-1.0微米。在室溫的條件下，該產(chǎn)品具有很高的靈敏度，還有一些附件支持，如濾光片（長(zhǎng)波濾光片和帶通濾光片）、前置放大器、光纖連接器。這些器件可應(yīng)用在工業(yè)的控制系統(tǒng)、氣體分析、熱傳感器以及光纖測(cè)試設(shè)備。
室溫Si探測(cè)器:
Detector type | Active Dia (mm) | Shunt Resistanve (MΩ) | Shunt Capacitance (PF),tpy | Operating Wavelength (nm) | Spectral Responsivity (A/W) | NEP (W/ ) @800nm,1KHz |
S-010 | 1.0 | 500 | 25 | 300-1000 | 0.55@850nm | <1.0x |
UVS-010 | 1.0 | 500 | 50 | 200-1000 | 0.55@800nm | <1.0x |
S-025 | 2.5 | 500 | 400 | 300-1000 | 0.55@850nm | <1.0x |
UVS-025 | 2.5 | 200 | 300 | 200-1000 | 0.50@800nm | <1.5x |
S-050 | 5 | 200 | 1500 | 350-1100 | 0.55@850nm | <1.5x @850nm |
UVS-050 | 5 | 50 | 1000 | 200-1100 | 0.50@800nm | <3.0x @700nm |
S-100 | 10 | 10 | 1000 | 350-1100 | 0.50@850nm | <1.0x @850nm |
UVS-100 | 10 | 50 | 1800 | 200-1000 | 0.50@800nm | <5x @800nm |
S-113 | 11.3 | 200 | 9000 | 300-1100 | 0.55@850nm | <1.5x |
UVS-113 | 11.3 | 10 | 4000 | 200-1000 | 0.50@800nm | <1.0x |
二級(jí)制冷Si探測(cè)器:
type | Operating Temperature(℃) | Shunt Resistanve (MΩ) | Shunt Capacitance (PF),tpy | NEP (W/ )@800nm | Responsivity@850nm (A/W) | Cooler Current (A) |
S-010-TE2 | 22 | 500 | 25 |
| 0.55 | 0.00 |
-30 | >1000 | 25 |
| 0.55 | 0.65 | |
UVS-010-TE2 | 22 | 500 | 50 |
| 0.55 | 0.00 |
-30 | >1000 | 50 |
| 0.55 | 0.65 | |
S-025-TE2 | 22 | 100 | 400 | <1.9x10-14 | 0.55 | 0.00 |
-30 | >1000 | 400 | <5x10-15 | 0.55 | 0.65 | |
UVS-025-TE2 | 22 | 200 | 300 | <1.5x10-14 | 0.55 | 0.00 |
-30 | >1000 | 300 | <10-14 | 0.55 | 0.65 | |
S-050-TE2 | 22 | >200 | 1000 | <1.5x10-14 | 0.55 | 0.00 |
-30 | >1000 | 1000 | <10-14 | 0.55 | 0.65 | |
UVS-050-TE2 | 22 | >100 | 1000 | <2x10-14 | 0.55 | 0.00 |
-30 | >1000 | 1000 | <10-14 | 0.55 | 0.65 | |
S-100-TE2 | 22 | 10 | 1000 | <1.0x10-13 | 0.50 | 0.00 |
-30 | 500 | 900 | <1.0x10-14 | 0.50 | 0.70 | |
UVS-100-TE2 | 22 | 50 | 1800 | <5.0x10-14 | 0.50 | 0.00 |
-30 | 1000 | 1600 | <1.0x10-14 | 0.50 | 0.70 |
